Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al 0.22Ga 0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τ t/ τ q∼1, shows that the dominant mobility-limiting mechanisms are sh...

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Bibliographic Details
Published in:Solid state communications 2004-07, Vol.131 (1), p.37-40
Main Authors: Qiu, Z.J., Gui, Y.S., Lin, T., Lu, J., Tang, N., Shen, B., Dai, N., Chu, J.H.
Format: Article
Language:English
Subjects:
A. Quantum well
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. Magnetoresistance
D. Two-dimensional electron gas
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
Quantum wells
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Summary:The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al 0.22Ga 0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τ t/ τ q∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin–orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T −1 law, indicating that electron–electron scattering with small energy transfer is the dominant inelastic process.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2004.04.021