Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature

• Published in: Solid state communications 2005-04, Vol.134 (3), p.217-222
• Main Authors: Rashmi, Bednarz, Lukasz, Hackens, Benoit, Farhi, Ghania, Bayot, Vincent, Huynen, Isabelle
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; D. Rectification; D. Second harmonic generation; D. Switching; D. Y-branch junction; Dielectric breakdown and space-charge effects; Dielectric properties of solids and liquids; Dielectrics, piezoelectrics, and ferroelectrics and their properties; E. Nanodevice; E. Nonlinear; Exact sciences and technology; Physics
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2004.11.029

A detailed analysis of nonlinear effects-electron switching and rectification, in InAlAs/InGaAs based Y-branch junction (YBJ) devices is presented to investigate the potential of YBJ for high frequency applications at 300 K. Results based on semi-classical simulations yield good qualitative agreement with measurements and previously reported theoretical and experimental results. The nonlinear parabolic behaviour of our device is attributed to device geometry and space charge effects. RF analysis shows that the YBJ has tremendous intrinsic potential to function as a frequency doubler and microwave rectifier when operated in the parabolic regime. The present analysis serves as a tool to optimize the bias conditions for RF measurements and to estimate the effect of interconnects and parasitic elements on the RF performance of real devices.