Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods

Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems...

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Bibliographic Details
Published in:Solid state communications 2012-05, Vol.152 (10), p.860-863
Main Authors: Drichko, I.L., Diakonov, A.M., Malysh, V.A., Smirnov, I.Yu, Koptev, E.S., Nikiforov, A.I., Stepina, N.P., Galperin, Y.M., Bergli, J.
Format: Article
Language:English
Subjects:
A. Quantum dots
D. Ac transport
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Summary:Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power. ► AC conductance in 2D arrays of Ge-in-Si QDs using acoustic technique. ► Non-Ohmic behavior is due to heating of the holes by AC electric field. ► Simulations of AC conductance in a 2D lattice of localized states were performed.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2012.02.016