Bipolar resistive switchings in Bi2Sr2CaCu2O8+δ

• Published in: Solid state communications 2013-09, Vol.170, p.48-52
• Main Authors: Tulina, N.A., Borisenko, I.Yu, Sirotkin, V.V.
• Format: Article
• Language: English
• Subjects: A. High temperature superconductors; A. Strongly correlated electron system; C. Interface structures; D. Bipolar resistive switchings
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2013.07.023

Investigations of bipolar resistive switchings in Bi2Sr2CaCu2O8+δ single crystal heterostructures are reported. The current–voltage characteristics of heterocontacts with switching effects exhibit a diode nature with Schottky-like barriers on high doped semiconductors. In this case the carrier tunneling processes are responsible for the current transfer in the structure. The voltage of switching into the metastable state is determined by barrier-controlled carrier tunneling. Spatial carrier inhomogeneity produces a field influence on the potential barrier in the interface of heterostructures with the BRS effect, redistribution of carriers and first order phase transition in the phase separation system. The numerical simulation method was used to consider the influence of inhomogeneous electrical field distribution in the heterocontact interface on the BRS effect in the oxide compounds. •The CVC of the BSCCO heterocontacts exhibiting the BRS effect has a diode character with Schottky-like barriers on high doped semiconductors.•The numerical simulation method was used to consider the influence of inhomogeneous field distribution in the heterocontact interface on the BRS effect.•The spatial carrier inhomogeneity produces electric field influence on the potential barrier in the interface of the heterostructures.