Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering asso...

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Bibliographic Details
Published in:Solid state communications 2016-11, Vol.245, p.25-30
Main Authors: Tsybeskov, L., Mala, S.A., Wang, X., Baribeau, J.-M., Wu, X., Lockwood, D.J.
Format: Article
Language:English
Subjects:
A. Nanostructures
B. Molecular beam epitaxy
D. Inelastic light scattering
E. Raman scattering
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Summary:We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices. •Processes associated with inelastic light scattering in Si/SiGe nanostructures are reviewed.•Raman analysis of strain and chemical composition in Si/SiGe nanostructures is presented.•Si/SiGe nanostructure thermal properties are studied using Raman scattering.•Polarized Raman scattering is used in detecting strain in Si/SiGe nanostructures.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2016.07.008