Pressure-induced metallization in Erbium trihydride

Electrical resistivity and Raman spectra of ErH3 were studied in a diamond anvil cell under high pressure up to 140GPa in the temperature range 4–300K. A crossover from a semiconductor-like to a metallic temperature dependence of resistivity at fixed pressures was observed at about 50GPa. In the pre...

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Bibliographic Details
Published in:Solid state communications 2017-09, Vol.263, p.23-26
Main Authors: Kuzovnikov, M.A., Eremets, M.I., Drozdov, A.P., Tkacz, M.
Format: Article
Language:English
Subjects:
High pressure
Metallization
Semiconductors
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Summary:Electrical resistivity and Raman spectra of ErH3 were studied in a diamond anvil cell under high pressure up to 140GPa in the temperature range 4–300K. A crossover from a semiconductor-like to a metallic temperature dependence of resistivity at fixed pressures was observed at about 50GPa. In the pressure range 80–140GPa a resistivity maximum was observed at the R(T) dependencies. The temperature corresponding to this maximum linearly increased with pressure increase, reaching 26K at 140GPa. No superconductivity was observed in the studied pressure-temperature range. •Electrical resistance of Erbium trihydride has been measured up to 140GPa.•Pressure of metallization has been determined.•Anomaly of the resistance as function of pressure has been noticed.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2017.07.004