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Influence of temperature and carrier density on the photoluminescence intensity of semiconductor carbon nanotubes

The role of temperature and carrier density in the photoluminescence (PL) properties of single-walled carbon nanotubes (SWNTs) is theoretically studied by solving the Bethe-Salpeter equation. Especially, the calculation of PL peak position and height for various carrier densities shows a good agreem...

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Bibliographic Details
Published in:Solid state communications 2019-02, Vol.288, p.5-9
Main Authors: Van Tan, Le, Vy, Nguyen Duy, Cao, Huy Thien
Format: Article
Language:English
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Summary:The role of temperature and carrier density in the photoluminescence (PL) properties of single-walled carbon nanotubes (SWNTs) is theoretically studied by solving the Bethe-Salpeter equation. Especially, the calculation of PL peak position and height for various carrier densities shows a good agreement with experimental results. The peak position and width show a moderate dependence while the intensity presents a strong dependence on temperature and density where a blue shift and intensity enhancement at low temperature are seen. These results help confirming the role of Coulomb effects on the optical transition in SWNTs. •Theoretical calculation of photoluminescence (PL) of carbon nanotubes has been done.•Contributions of carriers are studied by solving the Bethe-Salpeter equation.•PL behavior, peak position and width, shows good agreement with experimental results.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2018.11.001