Controlling charge transport in HgTe topological insulator by dual-electrical modulations

• Published in: Solid state communications 2023-11, Vol.373-374, p.115335, Article 115335
• Main Authors: Liu, Yanfei, Chen, Zengbiao, Chen, Guoluan, Zhu, Zixuan, Ling, Yiyun, Lin, Liangzhong
• Format: Article
• Language: English
• Subjects: Dual-electrical modulations; n HgTe topological insulator; Topological insulator-based devices; Transport properties
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2023.115335

Heterostructure transport properties is investigated theoretically based on two-dimensional planar HgTe/CdTe quantum wells structure by a dual-gate modulations. Two voltage gates is deposited on the top of the heterostructure to create the corresponding electrical modulation potential. The electron transport property is explored by calculating the transmission spectrum by tuning the incidence angle, Fermi energy and electrical modulation potential. It is demonstrated that the transmission probability can be effectively tuned by changing the incidence angle, gate voltage and Fermi energy. Our findings pave the way for possible future applications of topological insulator-based devices. •This work theoretically presents the transport investigation on the heterostructure based on 2D HgTe/CdTe quantum wells by a dual-gate modulations.•Two voltage gates is deposited on the top of the heterostructure to create the corresponding electrical modulation potential.•The electron transport property is explored by calculating the transmission spectrum by tuning the incidence angle, Fermi energy and electrical modulation potential.•It is demonstrated that the transmission probability can be effectively tuned by changing the incidence angle, gate voltage and Fermi energy.•Our findings pave the way for possible future applications of topological insulator-based devices.