Interdiffusion in chalcogenide semiconductor superlattice nanostructures

The diffusion intermixing of layers during annealing of epitaxial superlattice nanostructures based on chalcogenide semiconductors (PbS, PbSe, PbTe, EuS, EuSe, SrS) was studed by X-ray diffraction technique. The interdiffusion coefficients were determined basing on changing of the intensity of near-...

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Bibliographic Details
Published in:Solid state communications 2025-01, Vol.395, p.115731, Article 115731
Main Authors: Sipatov, A., Konotopsky, L., Moroz, E., Volobuev, V.
Format: Article
Language:English
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Summary:The diffusion intermixing of layers during annealing of epitaxial superlattice nanostructures based on chalcogenide semiconductors (PbS, PbSe, PbTe, EuS, EuSe, SrS) was studed by X-ray diffraction technique. The interdiffusion coefficients were determined basing on changing of the intensity of near-Bragg reflection satellites in X-ray diffraction pattern. Layer materials in superlattices EuS-PbTe and PbS-PbTe are not intermixed.
ISSN:0038-1098
DOI:10.1016/j.ssc.2024.115731