Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances

Raised source/drain (S/D) or raised extension in fully-depleted-SOI (FDSOI) is necessary to boost saturation current, because of increased resistance from the very thin film. We demonstrate that the choice of raising the extension versus the S/D, will depend upon the maximum achievable mobility in t...

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Bibliographic Details
Published in:Solid-state electronics 2004-09, Vol.48 (9), p.1607-1612
Main Authors: (Skip) Egley, J.L, Vandooren, Anne, Winstead, Brian, Verret, Eric, Workman, Chip, White, Bruce, Nguyen, Bich-Yen
Format: Article
Language:English
Subjects:
FDSOI
Fully depleted SOI
Raised S/D
Raised SD extension
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Summary:Raised source/drain (S/D) or raised extension in fully-depleted-SOI (FDSOI) is necessary to boost saturation current, because of increased resistance from the very thin film. We demonstrate that the choice of raising the extension versus the S/D, will depend upon the maximum achievable mobility in the structure at a 60 nm physical gate length. We also study the effects of minimum BEOL via spacing on performance, and its consequence on choosing a raised extension or S/D.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2004.03.009