Influences of nonuniformity in metal concentration in gate dielectric silicate on CMIS inverters' propagation delay time

• Published in: Solid-state electronics 2004-12, Vol.48 (12), p.2191-2198
• Main Authors: Ono, Mizuki, Ino, Tsunehiro, Koyama, Masato, Takashima, Akira, Nishiyama, Akira
• Format: Article
• Language: English
• Subjects: Applied sciences; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2004.05.049

It is shown that propagation delay time in CMIS (complementary metal insulator semiconductor field effect transistor) inverters is strongly affected by dielectric constant nonuniformity in gate dielectrics caused by the phase separation in silicate films. Influences of such nonuniformity on load capacitance are studied by analytical calculations based on a physical model which takes polarization into account. It is newly found that load capacitances are affected by the phase separation in qualitatively different ways, depending on the average metal concentration of their dielectric films. An experimental result is compared with those calculations. Influences of such nonuniformity on current drivability are studied by 3-dimensional device simulations. It is also newly found that such nonuniformity affects load capacitance and current drivability in different ways, resulting in an increase in propagation delay time of CMIS inverters for all metal concentrations studied. An explanation of this phenomenon is given with physical considerations.