Analysis and optimisation of the trench gated emitter switched thyristor

The performance of the trench gated emitter switched thyristor (TEST) is investigated by numerical simulations. More specifically, the influence of the N+ floating emitter on the forward voltage drop and forward-biased safe operating area (FBSOA) is studied in detail. It is demonstrated that, by red...

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Bibliographic Details
Published in:Solid-state electronics 2004-12, Vol.48 (12), p.2207-2211
Main Authors: Spulber, O., Sweet, M., Vershinin, K., Luther-King, N., De Souza, M.M., Sankara Narayanan, E.M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The performance of the trench gated emitter switched thyristor (TEST) is investigated by numerical simulations. More specifically, the influence of the N+ floating emitter on the forward voltage drop and forward-biased safe operating area (FBSOA) is studied in detail. It is demonstrated that, by reducing the doping of this region, the FBSOA of the TEST can be significantly increased with a negligible degradation of the forward voltage drop VCE(SAT). Moreover, a new cathode design is proposed for the TEST by removing the connection between the two P base regions and leaving one of them floating. By doing so, the snap-back from the static turn-on is removed, and the forward voltage drop is improved even for a lower doping of the N+ floating emitter.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2004.05.078