Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

An ‘atomistic’ circuit simulation methodology is developed to investigate intrinsic parameter fluctuations introduced by discreteness of charge and matter in decananometer scale MOSFET circuits. Based on the ‘real’ doping profile, the impact of random device doping on 6-T SRAM static noise margins a...

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Bibliographic Details
Published in:Solid-state electronics 2005-05, Vol.49 (5), p.740-746
Main Authors: Cheng, B., Roy, S., Roy, G., Adamu-Lema, F., Asenov, A.
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Intrinsic parameter fluctuation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Static noise margin
Statistical compact model parameter extraction
Theoretical study. Circuits analysis and design
Transistors
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Summary:An ‘atomistic’ circuit simulation methodology is developed to investigate intrinsic parameter fluctuations introduced by discreteness of charge and matter in decananometer scale MOSFET circuits. Based on the ‘real’ doping profile, the impact of random device doping on 6-T SRAM static noise margins are discussed in detail for 35 nm physical gate length devices. We conclude that SRAM may not gain all the benefits of future bulk CMOS scaling, and new device architectures are needed to scale SRAM down to future technology node.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2004.09.005