Photocapacitance of GaAs thin-film epitaxial structures

A simple analytical model for calculating the high-frequency barrier capacitance of GaAs thin-film epitaxial structures both in the dark and under extrinsic illumination is presented. The model accounts for the space charge region at the film–substrate interface. The model shows that the photocapaci...

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Bibliographic Details
Published in:Solid-state electronics 2005-03, Vol.49 (3), p.343-349
Main Authors: Gorev, Nikolai B., Kodzhespirova, Inna F., Privalov, Evgeny N., Khuchua, Nina, Khvedelidze, Levan, Shur, Michael S.
Format: Article
Language:English
Subjects:
Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Extrinsic illumination
Film–substrate interface
GaAs epitaxial structure
MESFET threshold voltage
Photocapacitance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A simple analytical model for calculating the high-frequency barrier capacitance of GaAs thin-film epitaxial structures both in the dark and under extrinsic illumination is presented. The model accounts for the space charge region at the film–substrate interface. The model shows that the photocapacitance of these structures has the form of a narrow peak located at the bias voltage, at which the barrier capacitance drops abruptly with reverse bias. The underlying physical mechanism is discussed. A method for predicting the MESFET threshold voltage based on the measured photocapacitance is proposed and tested.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2004.10.004