Transient enhanced diffusion of B at low temperatures under extrinsic conditions

Transient enhanced diffusion of B in silicon is modelled at temperatures down to 500 °C, using a simplified model of self-interstitial clusters to describe the time evolution of the self-interstitial supersaturation, S. The model is highly predictive, providing an accurate description of diffusion b...

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Bibliographic Details
Published in:Solid-state electronics 2005-04, Vol.49 (4), p.618-627
Main Authors: Giles, L.F., Colombeau, B., Cowern, N., Molzer, W., Schaefer, H., Bach, K.H., Haibach, P., Roozeboom, F.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Dopant diffusion
Electronics
Exact sciences and technology
Materials
Modelling
Physics
Point defect clustering
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
TED
Thin film structure and morphology
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Summary:Transient enhanced diffusion of B in silicon is modelled at temperatures down to 500 °C, using a simplified model of self-interstitial clusters to describe the time evolution of the self-interstitial supersaturation, S. The model is highly predictive, providing an accurate description of diffusion both in the peak and tail regions of B marker layers, over a wide range of annealing conditions. The model is well adapted for implementation into existing 2D commercial simulation tools. Fundamental parameters of atomic-scale B diffusion were extracted for the first time at T = 500 °C, under both intrinsic and extrinsic conditions.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2004.12.007