High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

• Published in: Solid-state electronics 2005-07, Vol.49 (7), p.1228-1232
• Main Authors: Levinshtein, Michael E., Ivanov, Pavel A., Boltovets, Mykola S., Krivutsa, Valentyn A., Palmour, John W., Das, Mrinal K., Hull, Brett A.
• Format: Article
• Language: English
• Subjects: High-temperature operation; Junction diode; Silicon carbide
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2005.04.020

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range T = 300–773 K. Analysis of the forward current–voltage characteristics and reverse current recovery waveforms shows that the lifetime τ of non-equilibrium carriers steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, R d. As a result, R d is virtually temperature independent. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2 × 10 −6 A at T = 773 K and a reverse bias of 300 V.