Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation

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Bibliographic Details
Published in:Solid-state electronics 2005-08, Vol.49 (8), p.1320-1329
Main Authors: AUBRY-FORTUNA, V, DOLLFUS, P, GALDIN-RETAILLEAU, S
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2005.06.013