Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel...

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Bibliographic Details
Published in:Solid-state electronics 2006-03, Vol.50 (3), p.309-315
Main Authors: Wu, Meng-Yi, Dai, Sheng-Huei, Lee, Kung-Hong, Hu, Shu-Fen, King, Ya-Chin
Format: Article
Language:English
Subjects:
Applied sciences
Band-to-band tunneling induced substrate hot electron injection (BBISHE)
Electronics
Exact sciences and technology
Flash memory
Integrated circuits
Integrated circuits by function (including memories and processors)
NOR memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 10 4 P/E cycles.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2005.12.022