High aspect ratio cylindrical nanopores in silicon-on-insulator substrates

Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The elect...

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Bibliographic Details
Published in:Solid-state electronics 2007-10, Vol.51 (10), p.1391-1397
Main Authors: Petrossian, Leo, Wilk, Seth J., Joshi, Punarvasu, Hihath, Sahar, Posner, Jonathan D., Goodnick, Stephen M., Thornton, Trevor J.
Format: Article
Language:English
Subjects:
Applied sciences
Coulter counting
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Ion channel
Materials
Materials science
Nanopore
Nanoscale materials and structures: fabrication and characterization
Other topics in nanoscale materials and structures
Patch-clamp
Physics
Silicon-on-insulator
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Description
Summary:Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2007.06.014