A physical model of floating body effects in polysilicon thin film transistors

Based on a closed form of the base–emitter voltage of the parasitic bipolar transistor, a physical model of floating body effects is proposed for polysilicon thin film transistors, which takes into account the polysilicon graded pn junction and the generation rate including the Poole-Frenkel effect....

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Bibliographic Details
Published in:Solid-state electronics 2008-06, Vol.52 (6), p.930-936
Main Authors: Wu, W.J., Yao, R.H., Chen, T., Chen, R.S., Deng, W.L., Zheng, X.R.
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Floating body
Kink effect
Parasitic bipolar transistor
Polysilicon thin film transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Based on a closed form of the base–emitter voltage of the parasitic bipolar transistor, a physical model of floating body effects is proposed for polysilicon thin film transistors, which takes into account the polysilicon graded pn junction and the generation rate including the Poole-Frenkel effect. Simulated results by this model are in good agreement with experimental data. It is shown that the action of a parasitic bipolar transistor should be taken into account only when the channel length is short enough due to the much smaller carrier mobility in polysilicon compared with single crystalline silicon. Whereas, the parasitic bipolar transistor gain (β) increases sharply with decreasing the channel length when the channel length is less than 5μm, which is due to the rapid increase of the base transport factor (αT).
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2008.01.008