4H–SiC BJTs with current gain of 110

4H–SiC BJTs with a common emitter current gain of 110 have been demonstrated. The high current gain was attributed to a thin base of 0.25μm which reduces the carrier recombination in the base region. The device open base breakdown voltage (BVCEO) of 270V was much less than the open emitter breakdown...

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Bibliographic Details
Published in:Solid-state electronics 2008-07, Vol.52 (7), p.1008-1010
Main Authors: Zhang, Qingchun (Jon), Agarwal, Anant, Burk, Al, Geil, Bruce, Scozzie, Charles
Format: Article
Language:English
Subjects:
Applied sciences
Base thickness
BVCBO
BVCEO
Current gain
Degradation
Electronics
Exact sciences and technology
Power BJTs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Transistors
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Summary:4H–SiC BJTs with a common emitter current gain of 110 have been demonstrated. The high current gain was attributed to a thin base of 0.25μm which reduces the carrier recombination in the base region. The device open base breakdown voltage (BVCEO) of 270V was much less than the open emitter breakdown voltage (BVCBO) of 1560V due to the emitter leakage current multiplication from the high current gain by “transistor action” of BJTs. The device has shown minimal gain degradation after electrical stress at high current density of >200A/cm2up to 25h.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2008.03.004