Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study

AlGaN/GaN high electron mobility transistors (HEMTs) are favored for the use in high-power and high-frequency applications. Normally-off operation has been desired for various applications, but proved to be difficult to achieve. Recently, a new approach was proposed by Mizutani et al. [Mizutani T, I...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 2008-11, Vol.52 (11), p.1791-1795
Main Authors: Vitanov, S., Palankovski, V.
Format: Article
Language:English
Subjects:
81.05.Ea
85.30.De
85.30.Tv
Applied sciences
Electronics
Enhancement mode
Exact sciences and technology
HEMT
InGaN
Modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:AlGaN/GaN high electron mobility transistors (HEMTs) are favored for the use in high-power and high-frequency applications. Normally-off operation has been desired for various applications, but proved to be difficult to achieve. Recently, a new approach was proposed by Mizutani et al. [Mizutani T, Ito M, Kishimoto S, Nakamura F. AlGaN/GaN HEMTs with thin InGaN cap layer for normally-off operation. IEEE Elec Dev Lett 2007;28(7):549–51]: a thin InGaN cap layer introduces a polarization field, which raises the conduction band of the AlGaN/GaN interface. As a result, the threshold voltage is shifted in positive direction. Relying on the experimental work of Mizutani et al. we conduct a simulation study of the proposed devices. Our device simulation tool is expanded by material models for InN and InGaN and also an improved high-field mobility model accounting for the specifics of the III-N materials. Using this setup, we further explore the device specific effects and conduct an analysis of the AC characteristics.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2008.07.011