Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure

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Bibliographic Details
Published in:Solid-state electronics 2009-03, Vol.53 (3), p.276-278
Main Authors: FENG RAO, ZHITANG SONG, LIANGCAI WU, YUEFENG GONG, SONGLIN FENG, CHEN, Bomy
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Recording and replay of audio and video signals
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
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Summary:
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2008.12.003