FDSOI devices with thin BOX and ground plane integration for 32nm node and below

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Bibliographic Details
Published in:Solid-state electronics 2009-07, Vol.53 (7), p.730-734
Main Authors: Fenouillet-Beranger, C., Denorme, S., Perreau, P., Buj, C., Faynot, O., Andrieu, F., Tosti, L., Barnola, S., Salvetat, T., Garros, X., Cassé, M., Allain, F., Loubet, N., Pham-Nguyen, L., Deloffre, E., Gros-Jean, M., Beneyton, R., Laviron, C., Marin, M., Leyris, C., Haendler, S., Leverd, F., Gouraud, P., Scheiblin, P., Clement, L., Pantel, R., Deleonibus, S., Skotnicki, T.
Format: Article
Language:English
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ISSN:0038-1101
DOI:10.1016/j.sse.2009.02.009