Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

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Bibliographic Details
Published in:Solid-state electronics 2009-07, Vol.53 (7), p.786-791
Main Authors: BOCQUET, M, MOLAS, G, TOFFOLI, A, DELEONIBUS, S, GHIBAUDO, G, PANANAKAKIS, G, DE SALVO, B, PERNIOLA, L, GARROS, X, BUCKLEY, J, GELY, M, COLONNA, J. P, GRAMPEIX, H, MARTIN, F, VIDAL, V
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2009.03.018