High mobility CMOS technologies using III–V/Ge channels on Si platform

• Published in: Solid-state electronics 2013-10, Vol.88, p.2-8
• Main Authors: Takagi, S., Kim, S.-H., Yokoyama, M., Zhang, R., Taoka, N., Urabe, Y., Yasuda, T., Yamada, H., Ichikawa, O., Fukuhara, N., Hata, M., Takenaka, M.
• Format: Article
• Language: English
• Subjects: III–V Semiconductors; Mobility; MOSFET; SiGe; Strain
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2013.04.020

•Direct wafer bonding of InGaAs channels with Si substrates.•Self-align Ni–InGaAs metal S/D enable InGaAs-OI n-MOSFETs fabrication on Si.•Low Dit GeOx/Ge and thin EOT formed by ECR post plasma oxidation.•InGaAs-OI nMOSFETs and Ge p-MOSFETs integrated on same Ge wafers. MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10nm regime. From this viewpoint, attentions have recently been paid to Ge and III–V channels. In this paper, possible solutions for realizing III–V/Ge MOSFETs on the Si platform are presented. The high quality III–V channel formation on Si substrates can be realized through direct wafer bonding. The gate stack formation is constructed on a basis of atomic layer deposition (ALD) Al2O3 gate insulators for both InGaAs and Ge MOSFETs. As the source/drain (S/D) formation, Ni-based metal S/D is implemented for both InGaAs and Ge MOSFETs. By combining these technologies, we demonstrate successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance.