High-performance logic transistor DC benchmarking toward 7 nm technology-node between III–V and Si tri-gate n-MOSFETs using virtual-source injection velocity model

•We performed the virtual-source based analytical modeling for advanced InGaAs and Si tri-gate n-MOSFETs.•We carried out the performance benchmarking for Si and InGaAs tri-gate n-MOSFETs at 7nm technology-node.•The 7nm technology-node would require a significant improvement in the virtual source inj...

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Bibliographic Details
Published in:Solid-state electronics 2016-02, Vol.116, p.100-103
Main Authors: Baek, Rock-Hyun, Kim, Jin Su, Kim, Do-Kywn, Kim, Taewoo, Kim, Dae-Hyun
Format: Article
Language:English
Subjects:
InGaAs
Injection velocity
ITRS
Logic
Virtual-Source
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Summary:•We performed the virtual-source based analytical modeling for advanced InGaAs and Si tri-gate n-MOSFETs.•We carried out the performance benchmarking for Si and InGaAs tri-gate n-MOSFETs at 7nm technology-node.•The 7nm technology-node would require a significant improvement in the virtual source injection velocity and the electrostatic integrity. Injection velocity (vinj) is a unique figure-of-merit that determines logic transistor ON-current (ION) and switching delay (CV/I). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III–V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected ION/IOFF ratio for the 7nm technology node.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2015.11.031