A charge-based model of Junction Barrier Schottky rectifiers

• Published in: Solid-state electronics 2018-06, Vol.144, p.67-72
• Main Authors: Latorre-Rey, Alvaro D., Mudholkar, Mihir, Quddus, Mohammed T., Salih, Ali
• Format: Article
• Language: English
• Subjects: Breakdown voltage; Compact modeling; Junction Barrier Schottky; Rectifiers
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2018.03.004

•A charge-based model is proposed for Junction Barrier Schottky (JBS) didoes.•The charge-sharing effect is presented to explain the principles of operation.•Optimization strategies for breakdown voltage and leakage current are discussed.•The analytical model for the electric field in JBS devices is derived and validated. A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.