Performance analysis and simulation of vertical gallium nitride nanowire transistors

•Simulation of DC Performance of p- and n-body GaN Nanowire Transistors with excellent agreement to experiment.•Clarification of Threshold voltages for p-body, n-body and E- and D-mode transistors.•Analysis of Current Flow in vertical wire devices and its impact on transconductance.•Explanation of i...

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Bibliographic Details
Published in:Solid-state electronics 2018-06, Vol.144, p.73-77
Main Authors: Witzigmann, Bernd, Yu, Feng, Frank, Kristian, Strempel, Klaas, Fatahilah, Muhammad Fahlesa, Schumacher, Hans Werner, Wasisto, Hutomo Suryo, Römer, Friedhard, Waag, Andreas
Format: Article
Language:English
Subjects:
Gallium nitride
Nanowires
Simulation
Transistor
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Summary:•Simulation of DC Performance of p- and n-body GaN Nanowire Transistors with excellent agreement to experiment.•Clarification of Threshold voltages for p-body, n-body and E- and D-mode transistors.•Analysis of Current Flow in vertical wire devices and its impact on transconductance.•Explanation of impact of surface charges.•Field Plate architecture for maximum saturation current. Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2018.03.005