Photodiode with low dark current built in silicon-on-insulator using electrostatic doping

In this paper, we demonstrate experimentally a novel SOI-based photodiode using electrostatic doping and fabricated in a simple, low-cost process. Unlike a conventional ion-implanted pn junction diode, the electrostatically doped devices feature extremely low reverse-bias current. When used for phot...

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Bibliographic Details
Published in:Solid-state electronics 2020-06, Vol.168, p.107733, Article 107733
Main Authors: Liu, J., Zhu, K.-M., Zaslavsky, A., Cristoloveanu, S., Arsalan, M., Wan, J.
Format: Article
Language:English
Subjects:
Electrostatic doping
Photodiode
Silicon on insulator
Ultraviolet detection
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Summary:In this paper, we demonstrate experimentally a novel SOI-based photodiode using electrostatic doping and fabricated in a simple, low-cost process. Unlike a conventional ion-implanted pn junction diode, the electrostatically doped devices feature extremely low reverse-bias current. When used for photodetection, our devices exhibit a dark current three decades lower than a conventional photodiode and provide excellent detectivity even under low optical power density. Our electrostatically-doped diodes also feature enhanced response in the near-UV and 1/f low-frequency noise.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2019.107733