Phenol red based hybrid photodiode for optical detector applications

• Published in: Solid-state electronics 2020-09, Vol.171, p.107864, Article 107864
• Main Authors: Kacus, Hatice, Sahin, Yilmaz, Aydogan, Sakir, Incekara, Umit, Yilmaz, Mehmet, Biber, Mehmet
• Format: Article
• Language: English
• Subjects: Detectivity; Organic photodiode; Phenol red; Photoresponsivity
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2020.107864

•Novel phenol red dye film has been deposited on n-Si and SEM, XRD analyses have done.•To our knowledge, the first optical device application of phenol red was made by us.•I-V measurements of the phenol red/n-Si photodiode have been carried.•I-V measurements have performed at various light powers.•It has been seen that the device performances are dependent on the light power. In this study, the phenol red (PR) dye film has been deposited on n-type silicon wafer and SEM, XRD measurements of the film have taken. Then, the PR/n-Si photodiode has been fabricated and (dark) electrical and photoresponse characterization has been analysed. The current-Voltage (I-V) measurements have been carried out at varied light power ranging from 100 mW/cm2 to 400 mW/cm2. Rectification ratios (RR) have been determined as a function of illumination intensities and they are determined as 115.47 for 100 mW/cm2 and 30.26 for 400 100 mW/cm2, respectively. The ideality factor and the barrier height of the Co/PR/n-Si photodiode have been determined as 2.80 and 0.52 eV, respectively in dark. Therefore, it has been seen that the PR/n-Si photodiode performances are strongly dependent on the incident optical power. Namely, the current density has increased remarkably with the power of light at the same reverse bias voltage and this behavior is explained by strong capability of converting a light signal into an electrical for the PR/n-Si photodiode device. Responsivity (R) and detectivity (D*) of the PR/n-Si photodiode are also plotted as a function of illumination intensities for reverse biases and it is found that both parameters are dependent on the illumination intensity. Finally, the capacitance–voltage (C-V) characteristics of the device have been carried out at various frequencies. Obtained experimental results indicate that the PR dye can be used in various optoelectronic applications.