Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors

• Published in: Solid-state electronics 2021-11, Vol.185, p.108073, Article 108073
• Main Authors: Costa, Fernando J., Trevisoli, Renan, Doria, Rodrigo T.
• Format: Article
• Language: English
• Subjects: Self-heating; SOI; Thermal resistance; Thermal-coupling; UTBB
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2021.108073

•Analysis of the thermal cross-coupling effect in advanced UTBB transistors through 3D numerical simulations.•Study was performed through 3D numerical simulations validated with experimental data from the literature.•It could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the its bias conditions.•By varying the distance between the devices from 1 μm to 50 nm, one can observe degradations in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device.•All thermal coupling effects are more pronounced for distances below 400 nm. The focus of this work is to perform a first-time analysis of the thermal cross-coupling of a device on a neighbor one in advanced UTBB transistors through 3D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 µm to 50 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device.