Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

[Display omitted] Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical be...

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Bibliographic Details
Published in:Solid-state electronics 2021-09, Vol.183, p.108085, Article 108085
Main Authors: Vinuesa, G., Ossorio, O.G., García, H., Sahelices, B., Castán, H., Dueñas, S., Kull, M., Tarre, A., Jogiaas, T., Tamm, A., Kasikov, A., Kukli, K.
Format: Article
Language:English
Subjects:
Alumina
Aluminium oxide
hafnium oxide
Hafnium-aluminum oxide
MIM stack
NVM
Resistive switching
RRAM
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Summary:[Display omitted] Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2021.108085