Structural properties of Ge-Sb-Te alloys

•The Ge-Sb-Te (GST) thin films were prepared by reactive sputtering technique.•The structural properties of GST and Ge-rich GST thin films were investigated.•The structural changes were studied depending on various annealing temperatures.•GST system is suitable material for PCM applications. In this...

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Bibliographic Details
Published in:Solid-state electronics 2021-11, Vol.185, p.108101, Article 108101
Main Authors: Cinkaya, Hatun, Ozturk, Adil, Sirri Atilla Hasekioğlu, Arif, Evren Kaya, Zahit, Kalem, Seref, Charpin-Nicolle, Christelle, Bourgeois, Guillaume, Guillaume, Nicolas, Claire.Cyrille, Marie, Garrione, Julien, Navarro, Gabriele, Nowak, Etienne
Format: Article
Language:English
Subjects:
Ge-rich GST
GST
Phase change materials
Thermal annealing
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Summary:•The Ge-Sb-Te (GST) thin films were prepared by reactive sputtering technique.•The structural properties of GST and Ge-rich GST thin films were investigated.•The structural changes were studied depending on various annealing temperatures.•GST system is suitable material for PCM applications. In this work, we have investigated the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples. The structural properties of the films are studied after annealing temperatures from room temperature to 450 °C. We performed the annealing procedure using a heat rate of 10 °C/min to achieve the target temperature for a duration of 10 min under N2 flow. After heat treatment, we carried out X-Ray Diffraction (XRD), Fourier Infra-Red Spectroscopy (FTIR), Raman Spectroscopy and Scanning Electron Microscopy (SEM) equipped with Energy-dispersive X-ray spectroscopy (EDS) to investigate the evolution of the structure in the samples.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2021.108101