Cross-coupling effects in common-source current mirrors composed by UTBB transistors

•Study performed through 3D numerical simulations validated with experimental data.•Analysis of the coupling effects in current mirrors composed by UTBB as follows:•Capacitive coupling in VTH of the input device operating alone at reduced distances.•At small S, the temperature rise due to thermal co...

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Bibliographic Details
Published in:Solid-state electronics 2022-08, Vol.194, p.108352, Article 108352
Main Authors: José da Costa, Fernando, Trevisoli, Renan, Trevisoli Doria, Rodrigo
Format: Article
Language:English
Subjects:
Coupling effects
Current mirrors
SOI
UTBB
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Summary:•Study performed through 3D numerical simulations validated with experimental data.•Analysis of the coupling effects in current mirrors composed by UTBB as follows:•Capacitive coupling in VTH of the input device operating alone at reduced distances.•At small S, the temperature rise due to thermal coupling leads an ID2/ID1 increase.•Stronger effect observed in shorter device positioned at the channel width direction. This work performs an analysis of the cross-coupling effects influence on the performance of current mirrors composed by advanced UTBB SOI MOSFETs through 3D numerical simulations validated to experimental data of single devices. It is shown the presence of a capacitive coupling acting in the system, which can be demonstrated through the threshold voltage reduction at small distances between devices. Additionally, the temperature rise in the system due to the thermal coupling provokes a decrease in the input current as the devices become closer to each other. This is responsible for an increase of 3 % on ID2/ID1 ratio when the devices are biased at the same time and when the distance between them is lowered to 100 nm.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2022.108352