Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

Saved in:
Bibliographic Details
Published in:Solid-state electronics 2024-01, Vol.211, p.108807, Article 108807
Main Authors: de Andrade, Maria Glória Caño, Nogueira, Carlos Roberto, Júnior, Nilton Graciano, Doria, Rodrigo T., Trevisoli, Renan, Simoen, Eddy
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0038-1101
DOI:10.1016/j.sse.2023.108807