Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

•The role of a 3 nm Al2O3 on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated.•The devices can be SET at different resistance levels by varying the ICC.•SET/RESET voltages are higher compared to the reference sample, corresponding to the voltage drop on the Al2O3.•A compact model can...

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Bibliographic Details
Published in:Solid-state electronics 2025-01, Vol.223, p.109035, Article 109035
Main Authors: Mavropoulis, A.E., Vasileiadis, N., Normand, P., Theodorou, C., Ch. Sirakoulis, G., Kim, S., Dimitrakis, P.
Format: Article
Language:English
Subjects:
Aluminum Oxide
MIS
ReRAM
Resistance switching
RRAM
Silicon Nitride
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Summary:•The role of a 3 nm Al2O3 on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated.•The devices can be SET at different resistance levels by varying the ICC.•SET/RESET voltages are higher compared to the reference sample, corresponding to the voltage drop on the Al2O3.•A compact model can be successfully used to simulate the I-V curves of our devices in circuit level designs.•Impedance spectroscopy measurements revealed that the conduction in SiNx is mostly governed by trap-to-trap tunneling mechanisms. The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
ISSN:0038-1101
DOI:10.1016/j.sse.2024.109035