Performance analysis of GaN-based micro light-emitting diodes by laser lift-off process

In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence caused by the differing refractive indexes of sapphire (n = 1.77) and GaN (n = 2.4). The LLO-µLED...

Full description

Saved in:
Bibliographic Details
Published in:Solid state electronics letters 2019-07, Vol.1 (2), p.58-63
Main Authors: Li, Sheng-Hui, Lin, Chia-Ping, Fang, Yen-Hsiang, Kuo, Wei-Hung, Wu, Ming-Hsien, Chao, Chu-Li, Horng, Ray-Hua, Su, Guo-Dung J.
Format: Article
Language:English
Subjects:
GaN
Laser lift-off
Light-emitting diodes
Micro-LEDs
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence caused by the differing refractive indexes of sapphire (n = 1.77) and GaN (n = 2.4). The LLO-µLEDs considerably improve light collimation, compared with conventional flip-chip µLEDs containing a sapphire substrate. We highlight, in particular, the importance of the optical characteristics before and after LLO. Collimation of light was discovered to be 12% higher after removal of the sapphire substrate. The results are of high importance for understanding the optical properties of µLED arrays after LLO.
ISSN:2589-2088
2589-2088
DOI:10.1016/j.ssel.2019.06.001