Lithium implanted into diamond: Regular trends and anomalies

• Published in: Surface & coatings technology 2016-12, Vol.307, p.236-242
• Main Authors: Khmelnitsky, R.A., Saraykin, V.V., Dravin, V.A., Zavedeyev, E.V., Makarov, S.V., Bronsky, V.S., Gippius, A.A.
• Format: Article
• Language: English
• Subjects: Diamond; Diffusion; Ion implantation; Lithium; SIMS; Swelling
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2016.08.047

Diamond single crystals implanted with 7Li+ ions within broad range of fluences including those higher graphitization threshold were studied by secondary ion mass spectrometry (SIMS) and optical interference profilometry. It has been shown that sputtering coefficient of diamond does not depend on the level of radiation damage and on the microstructure of the material, which may be due to the formation of an amorphous layer on the surface during the ion bombardment. Graphitization domains were observed immediately after high-fluence ion implantation, prior to annealing. No diffusion of implanted lithium (at any fluences) was observed in diamond both at high-temperature treatment and under strong photothermal excitation near the ablation threshold. SIMS measurements have shown sharp decrease of lithium ion yield in strongly damaged diamond, particularly in graphitized region, which has not yet been satisfactorily explained. •Diamonds implanted with 7Li+ ions were studied by SIMS and optical interference profilometry.•High-temperature treatment and strong photothermal excitation does not stimulate the diffusion of implanted Li in diamond.•The ion sputtering of diamond does not depend on the level of radiation damage and on the microstructure of the material.•The SIMS yield of lithium ions is decreased within the graphitized layer in diamond by two of three orders of magnitude.