Large enhancement of photocatalytic activity in ZnO thin films grown by plasma-enhanced atomic layer deposition

• Published in: Surfaces and interfaces 2021-04, Vol.23, p.100984, Article 100984
• Main Authors: Omerzu, Ales, Peter, Robert, Jardas, Daria, Turel, Iztok, Salamon, Kresimir, Podlogar, Matejka, Vengust, Damjan, Jelovica Badovinac, Ivana, Kavre Piltaver, Ivna, Petravic, Mladen
• Format: Article
• Language: English
• Subjects: Atomic layer deposition; Photocatalysis; Plasma; Thin film; Zinc oxide
• ISSN: 2468-0230; 2468-0230
• DOI: 10.1016/j.surfin.2021.100984

•Thin ZnO films can be grown at low temperatures using the PE-ALD method•The photocatalytic activity of PE-ALD thin ZnO films is strongly enhanced•The PE-ALD films show a significantly higher excitation rate in the UV spectral region•The degree of crystallinity in the PE-ALD films is lower•The PE-ALD films contain a high concentration of zinc vacancies In this work, we present a large, tenfold enhancement in the photocatalytic activity of thin ZnO films grown by plasma-enhanced atomic layer deposition (PE-ALD) at 100 °C, compared to values obtained for thin ZnO films deposited by a conventional thermal ALD method at the same temperature. Thus, we have demonstrated that we can deposit thin ZnO films using the PE-ALD method both at low temperatures and with a high photocatalytic ability. A number of structural (SEM, EDX, HRTEM, GIXRD, XRR, XPS, SIMS) and optical (UV-Vis, PL) experimental techniques have been employed to elucidate a possible physical origin of the observed remarkable difference in the photocatalytic activity of thin ZnO films grown by the PE-ALD method compared to those grown by the thermal ALD method. [Display omitted]