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Polarization resistance of Pt/YSZ and ITO/YSZ interfaces in multilayered Pt|YSZ|Pt and ITO|YSZ|ITO thin films
Polarization resistances across Pt/YSZ and ITO/YSZ interfaces were probed on thin film structures with large surface area to volume ratio. High polarization resistance of Pt/YSZ interface responsible for the operating temperature of 873 K is suppressed in ITO/YSZ by atleast three orders of magnitude...
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Published in: | Surfaces and interfaces 2023-04, Vol.37, p.102700, Article 102700 |
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container_title | Surfaces and interfaces |
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creator | Ravindranath, Nair Afijith Clinsha, P.C. Pandian, Ramanathaswamy Natarajan, Gomathi Bahuguna, Ashok S, Abhaya Sivaraman, N. Gnanasekar, K.I. |
description | Polarization resistances across Pt/YSZ and ITO/YSZ interfaces were probed on thin film structures with large surface area to volume ratio. High polarization resistance of Pt/YSZ interface responsible for the operating temperature of 873 K is suppressed in ITO/YSZ by atleast three orders of magnitude due to the partial solubility of an electronic conductor ITO in YSZ with the scope for reduction in temperatures to about 673 K. The conductivity of YSZ thin films measured in sandwiched configuration with Pt and ITO electrodes for the temperature interval of 673 – 973 K for multilayers configured as Pt|YSZ|Pt and ITO|YSZ|ITO were compared. Textured thin films of Pt, ITO and 8 mol% of Yttria stabilized zirconia (YSZ) exhibiting columnar growth were deposited on (100) SrTiO3. |
doi_str_mv | 10.1016/j.surfin.2023.102700 |
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High polarization resistance of Pt/YSZ interface responsible for the operating temperature of 873 K is suppressed in ITO/YSZ by atleast three orders of magnitude due to the partial solubility of an electronic conductor ITO in YSZ with the scope for reduction in temperatures to about 673 K. The conductivity of YSZ thin films measured in sandwiched configuration with Pt and ITO electrodes for the temperature interval of 673 – 973 K for multilayers configured as Pt|YSZ|Pt and ITO|YSZ|ITO were compared. 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High polarization resistance of Pt/YSZ interface responsible for the operating temperature of 873 K is suppressed in ITO/YSZ by atleast three orders of magnitude due to the partial solubility of an electronic conductor ITO in YSZ with the scope for reduction in temperatures to about 673 K. The conductivity of YSZ thin films measured in sandwiched configuration with Pt and ITO electrodes for the temperature interval of 673 – 973 K for multilayers configured as Pt|YSZ|Pt and ITO|YSZ|ITO were compared. Textured thin films of Pt, ITO and 8 mol% of Yttria stabilized zirconia (YSZ) exhibiting columnar growth were deposited on (100) SrTiO3.</description><subject>Conductivity in sandwiched configuration and polarization resistance</subject><subject>Electrochemical impedance</subject><subject>Multilayered thin film</subject><subject>Pulsed laser deposition</subject><subject>Yttria stabilized zirconia</subject><issn>2468-0230</issn><issn>2468-0230</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWGr_gYv8gWmTzEwysxGk-CgUWrAudBPyxJR5SJIKlf74ph0FV67uuYdzLpcPgFuMphhhOttOw85b100JInmyCEPoAoxIQassOejyj74GkxC2CCFcsbrE5Qi0674R3n2L6PoOehNciKJTBvYWruPs7eUdik7DxWZ11q6LxluhTEgStrsmukbsjTc6pQ8pcVjH38J5TRPGj5S1rmnDDbiyoglm8jPH4PXxYTN_zparp8X8fpkpUpYxU4JZrEpWM2EZIkZhyQpNi9xqUaFC1YTQQlJJmVKW1TIXiMpSMiJ1pZjC-RgUw13l-xC8sfzTu1b4PceIn6jxLR-o8RM1PlBLtbuhZtJvX854HpQziYZ23qjIde_-P3AEK-54eQ</recordid><startdate>202304</startdate><enddate>202304</enddate><creator>Ravindranath, Nair Afijith</creator><creator>Clinsha, P.C.</creator><creator>Pandian, Ramanathaswamy</creator><creator>Natarajan, Gomathi</creator><creator>Bahuguna, Ashok</creator><creator>S, Abhaya</creator><creator>Sivaraman, N.</creator><creator>Gnanasekar, K.I.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-9240-3530</orcidid></search><sort><creationdate>202304</creationdate><title>Polarization resistance of Pt/YSZ and ITO/YSZ interfaces in multilayered Pt|YSZ|Pt and ITO|YSZ|ITO thin films</title><author>Ravindranath, Nair Afijith ; Clinsha, P.C. ; Pandian, Ramanathaswamy ; Natarajan, Gomathi ; Bahuguna, Ashok ; S, Abhaya ; Sivaraman, N. ; Gnanasekar, K.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c255t-ca7f1c5797af702ec1b74d643fda804c92264b6b67ccf79b3a06b5b72bd8c7c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Conductivity in sandwiched configuration and polarization resistance</topic><topic>Electrochemical impedance</topic><topic>Multilayered thin film</topic><topic>Pulsed laser deposition</topic><topic>Yttria stabilized zirconia</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ravindranath, Nair Afijith</creatorcontrib><creatorcontrib>Clinsha, P.C.</creatorcontrib><creatorcontrib>Pandian, Ramanathaswamy</creatorcontrib><creatorcontrib>Natarajan, Gomathi</creatorcontrib><creatorcontrib>Bahuguna, Ashok</creatorcontrib><creatorcontrib>S, Abhaya</creatorcontrib><creatorcontrib>Sivaraman, N.</creatorcontrib><creatorcontrib>Gnanasekar, K.I.</creatorcontrib><collection>CrossRef</collection><jtitle>Surfaces and interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ravindranath, Nair Afijith</au><au>Clinsha, P.C.</au><au>Pandian, Ramanathaswamy</au><au>Natarajan, Gomathi</au><au>Bahuguna, Ashok</au><au>S, Abhaya</au><au>Sivaraman, N.</au><au>Gnanasekar, K.I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polarization resistance of Pt/YSZ and ITO/YSZ interfaces in multilayered Pt|YSZ|Pt and ITO|YSZ|ITO thin films</atitle><jtitle>Surfaces and interfaces</jtitle><date>2023-04</date><risdate>2023</risdate><volume>37</volume><spage>102700</spage><pages>102700-</pages><artnum>102700</artnum><issn>2468-0230</issn><eissn>2468-0230</eissn><abstract>Polarization resistances across Pt/YSZ and ITO/YSZ interfaces were probed on thin film structures with large surface area to volume ratio. High polarization resistance of Pt/YSZ interface responsible for the operating temperature of 873 K is suppressed in ITO/YSZ by atleast three orders of magnitude due to the partial solubility of an electronic conductor ITO in YSZ with the scope for reduction in temperatures to about 673 K. The conductivity of YSZ thin films measured in sandwiched configuration with Pt and ITO electrodes for the temperature interval of 673 – 973 K for multilayers configured as Pt|YSZ|Pt and ITO|YSZ|ITO were compared. Textured thin films of Pt, ITO and 8 mol% of Yttria stabilized zirconia (YSZ) exhibiting columnar growth were deposited on (100) SrTiO3.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.surfin.2023.102700</doi><orcidid>https://orcid.org/0000-0002-9240-3530</orcidid></addata></record> |
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subjects | Conductivity in sandwiched configuration and polarization resistance Electrochemical impedance Multilayered thin film Pulsed laser deposition Yttria stabilized zirconia |
title | Polarization resistance of Pt/YSZ and ITO/YSZ interfaces in multilayered Pt|YSZ|Pt and ITO|YSZ|ITO thin films |
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