Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

•We propose 1S1R (NbOx/ZrOx) device as selector and memory characteristics.•Device physics and switching models are investigated in 1S1R.•Material and chemical analysis such XPS and EDS is investigated.•Stable RS in 1S1R stack is demonstrated using pulse and DC measurement.•Read margin is calculated...

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Bibliographic Details
Published in:Surfaces and interfaces 2023-10, Vol.41, p.103273, Article 103273
Main Authors: Cho, Youngboo, Heo, Jungang, Kim, Sungjoon, Kim, Sungjun
Format: Article
Language:English
Subjects:
Crossbar array
Resistive random-access memory
Resistive switching
Schottky emission conduction
Selector
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Summary:•We propose 1S1R (NbOx/ZrOx) device as selector and memory characteristics.•Device physics and switching models are investigated in 1S1R.•Material and chemical analysis such XPS and EDS is investigated.•Stable RS in 1S1R stack is demonstrated using pulse and DC measurement.•Read margin is calculated in 1S1R crossbar array configuration. Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile memory (NVM). Furthermore, RRAM is highly suitable for integration as a crossbar array (CBA). An RRAM-based CBA (R-CBA) shows various promising features in the fields of in-memory and neuromorphic computing. However, sneak-path current through unselected cells is a major obstacle in large-scale R-CBA development. To solve this issue, we propose a TiN/ZrOx/NbOx/Pt one selector-one resistor (1S1R) device structure that integrates the resistive switching and selector layer in a single stack. Material and electrical analyses were conducted to investigate the selector and resistive switching characteristics of the proposed device. The 1S1R device showed high selectivity (>5 × 101), low-resistance state/high-resistance state ratio (>5 × 101), long retention (>104 s), fast switching speeds (791 ns), stable operation, and excellent cell-by-cell variation. The conduction mechanism of the device was confirmed to be Schottky emission conduction. The maximum CBA size (139 × 139) was also obtained by calculating the read voltage margin. The proposed 1S1R device is suitable for large-scale CBA implementation and next-generation NVM. [Display omitted]
ISSN:2468-0230
2468-0230
DOI:10.1016/j.surfin.2023.103273