Unveiling the optoelectronic characteristics of SnTe thin films: An extensive investigation via structural & photoresponse analysis of drop-cast deposition

• Published in: Surfaces and interfaces 2024-02, Vol.45, p.103788, Article 103788
• Main Authors: Kannaujiya, Rohitkumar M., Chaki, Sunil H., Khimani, Ankurkumar J., Parekh, Zubin R., Hirpara, Anilkumar B., Soni, Saurabh S., Bariya, Sanjay N., Deshpande, M.P.
• Format: Article
• Language: English
• Subjects: Characterization; Photodetector; SnTe; Thin film
• ISSN: 2468-0230; 2468-0230
• DOI: 10.1016/j.surfin.2023.103788

Thin film on a glass slide substrate of tin telluride (SnTe) is deposited at room temperature by drop casting method. The thin films are thoroughly characterized. The study by diffraction of X-ray and Raman stated the crystalline structure and SnTe phase of the films. The films have a cubic structure with space group of Fm-3m. The Raman spectrum showed A1 and ETO vibration modes corresponding to SnTe. The microstructure study is done by optical and scanning electron microscopy. The atomic force microscopy stated the thin film to be flat having uniform even spread. The transmission electron microscopy at high-resolution supported the crystalline nature of the thin films. The spacing of fringes matched the SnTe primary crystallographic (200) plane spacing. The photoresponse of the SnTe thin film is investigated at three intensities keeping +50 mV biasing voltage. The photoresponse analysis showed the drop-casting deposited SnTe thin film offers potential for future applications. [Display omitted]