Initial growth processes of ultra-thin Ni-layers on Si(111) and electronic structure of epitaxially grown NiSi2

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Bibliographic Details
Published in:Surface science 2005-08, Vol.588 (1-3), p.71-82
Main Authors: NISHIMURA, T, TAKEDA, J, ASAMI, Y, HOSHINO, Y, KIDO, Y
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
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ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2005.05.029