Bistability in a H-terminated Si(1 0 0)2 × 1 surface obtained by ab initio transport calculations

• Published in: Surface science 2006-03, Vol.600 (5), p.62-65
• Main Authors: Gohda, Y., Watanabe, S.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Density functional calculations; Electron transport; Exact sciences and technology; Insulating surfaces; Physics; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.)
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2006.01.005

We have analyzed electron tunneling due to the electric field from a hydrogen-terminated Si(1 0 0)2 × 1 ultrathin film on a metal substrate by density functional transport calculations. We have obtained a hysteresis loop in the tunneling current, which comes from the existence of two electronic structures. Furthermore, we have clarified that, as a condition of bistable electron transport, a double-barrier potential structure is not necessarily required for zero field, because it can be induced by the electric field.