Dark spot formation relative to ITO surface roughness for polyfluorene devices

The failure behaviors of ITO/PEDOT;PSS/polyfluorene/Al devices are different depending on the surface roughness of the sputtered ITO anode film. The spikes on ITO surface are responsible for the initial local shorts of the device, which develop into dark spots very quickly. Indium adsorption is obse...

Full description

Saved in:
Bibliographic Details
Published in:Synthetic metals 2004-07, Vol.144 (1), p.1-6
Main Authors: Liu, Gao, Kerr, John B, Johnson, Steve
Format: Article
Language:English
Subjects:
Application fields
Applied sciences
Dark spot
Electronics
Exact sciences and technology
Failure mechanism
Interface
ITO surface
OLED
Optoelectronic devices
Polymer industry, paints, wood
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Technology of polymers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The failure behaviors of ITO/PEDOT;PSS/polyfluorene/Al devices are different depending on the surface roughness of the sputtered ITO anode film. The spikes on ITO surface are responsible for the initial local shorts of the device, which develop into dark spots very quickly. Indium adsorption is observed on the polymer and Al cathode interface. A chemical etching procedure is used to smoothen the ITO surface without changing the ITO thickness and the sheet resistance. Devices made out of smooth ITO show minimum changes at polymer–cathode interface during operation.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2004.01.011