Modeling electrical characteristics of thin-film field-effect transistors

The thin-film field-effect-transistor model recently developed is applied to devices based on materials that already show current even without a bias present at the gate resulting in so-called normally-on transistors. These fall in three categories: (i) narrow-band-gap semiconductors, where the ther...

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Bibliographic Details
Published in:Synthetic metals 2008-07, Vol.158 (11), p.473-478
Main Authors: Stallinga, P., Gomes, H.L.
Format: Article
Language:English
Subjects:
Metal–insulator–metal transistor
Organic semiconductors
Thin-film field-effect transistors
Two-dimensional electronics
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Summary:The thin-film field-effect-transistor model recently developed is applied to devices based on materials that already show current even without a bias present at the gate resulting in so-called normally-on transistors. These fall in three categories: (i) narrow-band-gap semiconductors, where the thermal energy is sufficient to excite carriers across the band-gap, here analyzed for unipolar and ambipolar materials, (ii) doped semiconductors, and (iii) metals. It is shown what the impact is on the IV and transfer curves.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2008.03.011