Investigating the effect of buffer layer on magnetoresistance in organic spin-valves

•An optimized buffer layer thickness is got to increase the MR in organic device.•MR can be improved by adjusting the thickness of buffer layer.•Different buffer layer materials are calculated and discussed. According to the magnetoresistance (MR) experiments in the Co/Al2O3/Alq3/LSMO device, we inv...

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Bibliographic Details
Published in:Synthetic metals 2013-07, Vol.176, p.92-95
Main Authors: Qin, W., Zhang, Y.B., Xie, S.J.
Format: Article
Language:English
Subjects:
Buffer layer
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Giant magnetoresistance
Magnetic properties and materials
Magnetoresistance
Magnetotransport phenomena, materials for magnetotransport
Manganites
Organic spintronics
Physics
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Summary:•An optimized buffer layer thickness is got to increase the MR in organic device.•MR can be improved by adjusting the thickness of buffer layer.•Different buffer layer materials are calculated and discussed. According to the magnetoresistance (MR) experiments in the Co/Al2O3/Alq3/LSMO device, we investigate spin injection and MR of this organic device. Taking into account the spin-related resistance and partial voltage of the Al2O3 buffer layer, we obtain an apparent adjustable MR of the organic device. A large MR is predicated with an optimized buffer layer thickness. In addition, the effects of different buffer layer materials on the MR are discussed to give a suggestion on experimental investigations.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2013.06.001