Structural, optical and thermal properties of V-doped GaN thin films grown by MOCVD technique

•The thermal properties of GaN and GaN: V were investigated by using photothermal deflection (PTD) technique.•V-doping in the GaN thin films does not change the gap energy.•Addition of Vanadium in the GaN matrix induces obviously a decrease in thermal conductivity. V-doped GaN epitaxial thin films w...

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Bibliographic Details
Published in:Thermochimica acta 2019-12, Vol.682, p.178428, Article 178428
Main Authors: Souissi, M., Ghrib, T., Al-Otaibi, A., Al-Nuaim, I.A., Bouzidi, M.
Format: Article
Language:English
Subjects:
Characterization
GaN
Heat transfer
Metal Organic Chemical Vapor Deposition
Vanadium
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Summary:•The thermal properties of GaN and GaN: V were investigated by using photothermal deflection (PTD) technique.•V-doping in the GaN thin films does not change the gap energy.•Addition of Vanadium in the GaN matrix induces obviously a decrease in thermal conductivity. V-doped GaN epitaxial thin films were grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrate. Structure, surface morphology, gap energy, thermal conductivity, and thermal diffusivity are studied. The results show that the gap energy does not change with this V-doping concentration but its thermal conductivity decreases to a factor of about 3.5 from 128 to 36 W/mK. This behavior may be associated with the structural changes that are taking place with the addition of V content, showing that the material presents a good performance asked in certain applications.
ISSN:0040-6031
1872-762X
DOI:10.1016/j.tca.2019.178428