Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiO x film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed...

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Bibliographic Details
Published in:Thin solid films 2007-02, Vol.515 (7), p.3802-3805
Main Authors: Chang, K., Shanmugasundaram, K., Shallenberger, J., Ruzyllo, J.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Deposition process
Dielectric thin films
Dielectrics
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Hafnium
Metal-oxide-semiconductor (MOS) structure
Physics
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Summary:The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiO x film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf–O and Hf–Si–O phases in the HfSiO x film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiO x the equivalent oxide thickness value of the Pt–HfSiO x –Si gate stack was decreasing and leakage current maintained lower than that of HfO 2 at the similar physical thickness.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.09.048